記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元： IEEE  

Power conversion efficiency of thin-film microcrystalline silicon solar cells has been remarkably improved recently: from 10.1% to 11.8%. Front transparent conductive oxide (TCO) films have played an important role in this efficiency improvement. In this study, the impact of the front TCO films was investigated by comparing microcrystalline silicon solar cells with In2O3:Sn films grown by sputtering and ZnO:B films grown by metal-organic chemical vapor deposition (MOCVD). Improvement mechanisms in open-circuit voltages and fill factors in solar cells are investigated and discussed.

DOI： 10.1109/JPHOTOV.2015.2478030

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Japan Society of Applied Physics  

We report that thin-film silicon solar cells exhibiting high stabilized efficiencies can be obtained by depositing hydrogenated amorphous silicon (a-Si:H) absorbers using triode-type plasma-enhanced chemical vapor deposition. The improved light-soaking stability and performance of solar cells are also realized by optimizing the device design, such as p and p–i buffer layers. As a result, we attain independently confirmed stabilized efficiencies of 10.1–10.2% for a-Si:H single-junction solar cells (absorber thickness: ti = 220–310 nm) and 12.69% for an a-Si:H (ti = 350 nm)/hydrogenated microcrystalline silicon (µc-Si:H) tandem solar cell fabricated using textured SnO2 and ZnO substrates, respectively. The relative efficiency degradations of these solar cells are ~10 and 3%, respectively, under 1 sun illumination at 50 °C for 1000 h.

記述言語：英語   掲載種別：研究論文（学術雑誌）   出版者・発行元：The Japan Society of Applied Physics  

The potential of high-rate growth of high-quality microcrystalline silicon (µc-Si:H) films for solar cell applications is investigated by very high frequency plasma-enhanced chemical vapor deposition (VHF-PECVD) under a high-pressure SiH4 depletion condition. It is found that the morphology of textured substrates plays an important role in not only light trapping but also µc-Si:H film growth. A high conversion efficiency of 11.1% is attained in a substrate-type µc-Si:H cell on a substrate with honeycomb textures, which has rounded concaves in a honeycomb arrangement with an appropriate period. It is also clarified that ZnO:B films grown by metal organic chemical vapor deposition (MOCVD) are beneficial in terms of carrier collection compared with the standard In2O3:Sn (ITO) film grown by sputtering. On the basis of these findings, a new world-record µc-Si:H cell with a certified conversion efficiency of 11.8% is developed with a relatively high deposition rate of 1 nm/s.

担当区分：筆頭著者   記述言語：英語   掲載種別：研究論文（国際会議プロシーディングス）  

記述言語：日本語   掲載種別：学位論文（博士）  

開催年月日： 2021年9月

記述言語：日本語   会議種別：口頭発表（一般）  

開催地：オンライン   国名：日本国